Full text of “IC Datasheet: EPROM” Jameco Part Number M NMOS Kbit (32Kb x 8) UV EPROM NOT FOR NEW DESIGN □ FAST. datasheet, pdf, data sheet, datasheet, data sheet, pdf, General NMOS K 32K x 8 UV EPROM Others with the same file for datasheet. (EPROM). The device is organized as 32K words by 8 bits (32K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin.

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This mode is intended for use by programming equipment for the purpose of automatically matching the device to be erpom with its corresponding programming algorithm. However, STMicroeiectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.

A single 5V power supply is required in the read mode.

Standby Mode The M has a standby mode which reduces the maximum active power current from mA to 40mA. It is recommended that a 1 j.

Datasheet(PDF) – Intel Corporation

The only way to change a “0” to a “1 ” is by ultraviolet light erasure. Specifications mentioned in this publication are subject to change without notice. All other address lines must be held at Vil during Electronic Signature mode. Two identifier bytes may then be sequenced from the device outputs by toggling address line AO from Vil to Vih.

Some lamps have a filter on their tubes which should be re- moved before erasure. For further information on any datasheey of this device, please contact STMicroelectronics Sales Office nearest to you.

Search the history of over billion web pages on the Internet. This ensures that all deselected memory devices are in their low power standby mode and that the output pins are only active when data is required from a dataeheet memory device. The purpose of the bulk capacitor is to overcome the voltage drop caused by the inductive effects of RGB traces. Research shows that constant exposure to room level fluorescent lighting could 227256 a typical M in about 3 years, while it would take approximately 1 week to cause erasure when exposed to direct sunlight.


Data s available at the ojjtputs after the falling edge of G, assuming that E has been low and the ad- dresses have been stable for at least tAvav-tcLov. The recommended erasure procedure for the M is exposure to short vyave ultraviolet light which has wavelength A. To activate this mode, the programming equipment must force Programming reliability is also ensured as the incremental program margin of each byte is continually monitored to determine when it has been successfully programmed.

Full text of ” IC Datasheet: The M is in the programming mode when Vpp input is at 1 2. It should be noted that sunlight and some type of fluorescent lamps have wavelengths in the A range. The bulk capacitor should be located near the power supply connection point.

A high level E input inhibits the other Ms from being programmed. The associated transient voltage peaks can be sup- pressed by complying with the two line output control and by properly selected decoupling ca- pacitors.

27256 – 27256 256K EPROM Datasheet

The data to be pro- grammed is applied 8 bits in parallel to the data output pins. For the STMi- croelectronics M, these two identifier bytes are given below. F ceramic capacitor be used on every device between Vcc and Vss- This should be a high frequency capacitor of low inherent inductance and should be placed as close to the device as possible. Chip Enable E is the power control and should be used for device selection.


The two line control function allows: The integrated dose i.

Vcc must be applied simultaneously with or before Vpp and removed simultaneously or after Vpp. These are stress ratings oniy and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. The M should be placed within 2. In addition, a 4. Program Verify A verify should be performed on the programmed bits to determine that they were correctly pro- grammed.

STIVIicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroeiectronics.

Datasheet pdf – K (32k x 8) Bit NMOS UV Erasable PROM – General Semiconductor

Assuming that the addresses are stable, address access time tflivov is equal to the delay from E to output tELOv. The duration of the initial E pulse s is 1 ms, which will then be followed by a eorom over- program pulse of length 3ms by n n is equal to the number of the initial one millisecond pulses applied Table 3. When in the standby mode, the outputs are in a high impedance state, independent of the G input.

This publication supersedes and replaces all information previously supplied. Up to 25 one-millisecond pulses per byte are provided for before the over program pulse is applied. The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern.